Sovereign Islamic Sukuk and the Economic Development: A Case Study of Jordan

The importance of Islamic sukuk, especially sovereign Islamic sukuk (which are issued by the government) for a country as Jordan that needs to develop projects and finance these projects is a very vital issue. Jordan does not have enough economic resources, but it can rely on national savings and use them effectively, rather than relying on foreign financial aids that represent a burden on the national economy and increase in external indebtedness, but all of that does not deny the issuance of these sukuk represents new financial obligations on the government if these sukuk are directed to meet the public common of Jordan’s needs in a time that requires sukuk to be issued to the existence of real assets, not cash, and here  we highlights that the most important question which is do we have the ability to find real and new assets so that we can benefit from the issuance of these sukuk? Keywords: Islamic Sukuk, Economic Development, Sovereign Financing, and Jordan

Issuing Sukuk and the Excessive Liquidity in the Islamic Financial Institutions in Jordan

This paper aims to identify Islamic Sukuk, their issuance basis, the latest developments of this instrument in the global market, and to identify Sukuk’s ability to resolve liquidity problems. In addition to some difficulties that confront the Islamic financial system. Also, this paper shows how Sukuk role in supporting the Islamic banking industry and solving some financial crises by analyzing some indicators. Keywords: Islamic banks, Sukuk, excessive liquidity, and banking system in Jordan

Self-Powered Broadband Photodetector Based on MoS2/Sb2Te3 Heterojunctions: A promising approach for highly sensitive detection

Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for sensing, imaging, communication, and optical computing systems to convert optical signals to electrical signals. Here we experimentally show a novel combination of topological insulators (TIs) and transition metal chalcogenides (TMDs) based self-powered photodetectors with ultra-low dark current and high sensitivity. The photodetector formed by a MoS2/Sb2Te3 heterogeneous junction exhibits a low dark current of 2.4 pA at zero bias and 1.2 nA at 1V. It shows a high photoresponsivity of > 150 mA W-1 at zero bias and rectification of 3 times at an externally applied bias voltage of 1V. The excellent performance of the proposed photodetector with its innovative material combination of TMDs and TIs paves the way for the development of novel high-performance optoelectronic devices. The TIs/TMDs transfer used to form the heterojunction is simple to incorporate into on-chip waveguide systems, enabling future applications on highly integrated photonic circuits.Comment: 8 Pages, 3 figure

Self-powered Broadband Photodetector on Flexible Substrate from Visible to Near Infrared Wavelength

Van der Waals (vdWs) heterostructures assembled by stacking 2D crystal layers have proven to be a new material platform for high-performance optoelectronic applications such as thin film transistors, photodetectors, and emitters. Here, we demonstrate a novel device with strain tuning capabilities using MoS2/Sb2Te3 vdWs p-n heterojunction devices designed for photodetection in the visible to near-infrared spectrum. The heterojunction devices exhibit remarkable characteristics, such as a low dark current in the range of a few picoamperes and a high photoresponsivity of 0.12 A/W. Furthermore, the proposed devices exhibit exceptional tunability when subjected to a compressive strain of up to 0.3%. By introducing strain at the interface of the heterojunction, the materials bandgap is affected resulting in a significant change in the band structure of the heterojunction. This leads to a change in the detectors optical absorption characteristics improving the responsivity of the device. The proposed strain-induced engineering of the electronic and optical properties of the stacked 2D crystal materials allows tuning of the optoelectronic performance of vdWs devices for high-performance and low-power consumption applications for applications like wearable sensors and flexible electro-optic circuits.Comment: 10 pages, 3 figure